NCE NCEP02T10

NCE · FETs & Power MOSFETs · MPN NCEP02T10

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Specifications

Configuration-
Gate Charge(Qg)87nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)425pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6nF

Technical details

N-Channel 200V 100A 300W Through Hole TO-220-3L

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