NCE NCEP026N10T

NCE · FETs & Power MOSFETs · MPN NCEP026N10T

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Specifications

Gate Charge(Qg)240nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.1nF
Current - Continuous Drain(Id)230A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)2.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)14nF
TypeN-Channel

Technical details

N-Channel 100V 230A 300W Through Hole TO-247

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