NCE · FETs & Power MOSFETs · MPN NCEP026N10D
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| Gate Charge(Qg) | 240nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 2.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 17.5nF |
| Type | N-Channel |
100V 200A 4V 300W 2.6mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS