NCE NCEP020N85D

NCE · FETs & Power MOSFETs · MPN NCEP020N85D

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Specifications

Drain to Source Voltage85V
Configuration-
Gate Charge(Qg)245nC@10V
Current - Continuous Drain(Id)300A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation340W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

85V 300A 4V 340W 2mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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