NCE NCEP01ND35AG

NCE · FETs & Power MOSFETs · MPN NCEP01ND35AG

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)26nC@50V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
RDS(on)22mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number2 N-Channel
Input Capacitance(Ciss)1.6nF

Technical details

N-Channel Array 100V 35A 50W Surface Mount DFN5x6-8L

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