NCE NCE85H21C

NCE · FETs & Power MOSFETs · MPN NCE85H21C

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Specifications

Gate Charge(Qg)140nC@10V
Drain to Source Voltage85V
Output Capacitance(Coss)720pF
Current - Continuous Drain(Id)210A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)346pF
RDS(on)4.95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.6nF
TypeN-Channel

Technical details

85V 210A 4V 300W 4.95mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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