NCE NCE82H160

NCE · FETs & Power MOSFETs · MPN NCE82H160

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Specifications

Gate Charge(Qg)201nC
Drain to Source Voltage82V
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation285W
Reverse Transfer Capacitance (Crss@Vds)461pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.18nF

Technical details

N-Channel 82V 160A 285W Through Hole TO-220-3L

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