NCE NCE82H110D

NCE · FETs & Power MOSFETs · MPN NCE82H110D

No reviews yet — be the first to review NCE NCE82H110D.

Specifications

Gate Charge(Qg)120nC@40V
Drain to Source Voltage82V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)318pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.4nF

Technical details

N-Channel 82V 110A 200W Surface Mount TO-263-2L

Related FETs & Power MOSFETs