NCE · FETs & Power MOSFETs · MPN NCE80T560F
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| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 33.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.3pF |
| RDS(on) | 480mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.39nF |
N-Channel 800V 9A 33.2W Through Hole TO-220F