NCE NCE70T1K2I

NCE · FETs & Power MOSFETs · MPN NCE70T1K2I

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage700V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation41W
Reverse Transfer Capacitance (Crss@Vds)0.5pF
RDS(on)1.1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)304pF

Technical details

700V 4A 4V 41W 1.1Ω@10V 1 N-channel TO-251 Single FETs, MOSFETs RoHS

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