NCE NCE6602

NCE · FETs & Power MOSFETs · MPN NCE6602

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Specifications

Configuration-
Gate Charge(Qg)5nC@15V
Drain to Source Voltage30V
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)150mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)210pF

Technical details

30V 3.5A 1.2V 1.2W 150mΩ@4.5V 1 N-Channel + 1 P-Channel TSOT-23-6 Single FETs, MOSFETs RoHS

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