NCE NCE65TF180D

NCE · FETs & Power MOSFETs · MPN NCE65TF180D

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Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation188W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.25nF

Technical details

N-Channel 650V 21A 188W Surface Mount TO-263

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