NCE NCE65TF099D

NCE · FETs & Power MOSFETs · MPN NCE65TF099D

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation322W
Reverse Transfer Capacitance (Crss@Vds)1.5pF
RDS(on)89mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
TypeN-Channel

Technical details

N-Channel 650V 38A 322W Surface Mount TO-263

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