NCE · FETs & Power MOSFETs · MPN NCE65TF068T
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| Gate Charge(Qg) | 85nC@480V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 53A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 435W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF |
| RDS(on) | 62mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.5nF |
650V 53A 2.5V 435W 62mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS