NCE NCE65TF041T

NCE · FETs & Power MOSFETs · MPN NCE65TF041T

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Specifications

Gate Charge(Qg)135nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation510W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)36mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.5nF

Technical details

650V 75A 3.5V 510W 36mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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