NCE · FETs & Power MOSFETs · MPN NCE65T900I
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 46W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF |
| RDS(on) | 750mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 370pF |
650V 5A 46W 750mΩ@10V 1 N-channel TO-251 Single FETs, MOSFETs RoHS