NCE · FETs & Power MOSFETs · MPN NCE65T680I
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.3pF |
| RDS(on) | 680mΩ@10V |
| Input Capacitance(Ciss) | 435pF |
| Type | N-Channel |
650V 7A 4V 60W 680mΩ@10V N-Channel TO-251 Single FETs, MOSFETs RoHS