NCE NCE65T680F

NCE · FETs & Power MOSFETs · MPN NCE65T680F

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Specifications

Gate Charge(Qg)11nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation31.4W
Reverse Transfer Capacitance (Crss@Vds)3.3pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)435pF

Technical details

N-Channel 650V 7A 31.4W Through Hole TO-220F

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