NCE NCE65T540

NCE · FETs & Power MOSFETs · MPN NCE65T540

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)37pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)0.9pF
RDS(on)540mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)590pF
TypeN-Channel

Technical details

N-Channel 650V 8A 69W Through Hole TO-220

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