NCE NCE65T360K

NCE · FETs & Power MOSFETs · MPN NCE65T360K

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)54pF
Current - Continuous Drain(Id)11.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation101W
Reverse Transfer Capacitance (Crss@Vds)1.8pF
RDS(on)360mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)870pF
TypeN-Channel

Technical details

N-Channel 650V 11.5A 101W Surface Mount TO-252

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