NCE NCE65T2K4K

NCE · FETs & Power MOSFETs · MPN NCE65T2K4K

No reviews yet — be the first to review NCE NCE65T2K4K.

Specifications

Configuration-
Gate Charge(Qg)10nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation21W
Reverse Transfer Capacitance (Crss@Vds)0.2pF
RDS(on)2.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)120pF

Technical details

N-Channel 650V 2A 21W Surface Mount TO-252

Related FETs & Power MOSFETs