NCE · FETs & Power MOSFETs · MPN NCE65T2K4I
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| Gate Charge(Qg) | 3.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 21W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.2pF |
| RDS(on) | 2.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 120pF |
650V 2A 3.5V 21W 2.2Ω@10V 1 N-channel TO-251 Single FETs, MOSFETs RoHS