NCE · FETs & Power MOSFETs · MPN NCE65T1K2I
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 18pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 41W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.6pF |
| RDS(on) | 1.1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 304pF |
| Type | N-Channel |
N-Channel 650V 4A 41W Through Hole TO-251