NCE NCE65T130F

NCE · FETs & Power MOSFETs · MPN NCE65T130F

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Specifications

Gate Charge(Qg)37.5nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)0.5pF
RDS(on)110mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.07nF

Technical details

650V 28A 3V 35W 110mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS

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