NCE NCE60P55K

NCE · FETs & Power MOSFETs · MPN NCE60P55K

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Specifications

Gate Charge(Qg)49.8nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)126pF
RDS(on)28mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.0168nF
TypeP-Channel

Technical details

60V 55A 3.5V 110W 28mΩ@10V 1 P-Channel P-Channel TO-252-2 Single FETs, MOSFETs RoHS

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