NCE · FETs & Power MOSFETs · MPN NCE60NP2012K
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| Gate Charge(Qg) | 25nC@30V;37.6nC@30V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 20A;12A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V;1.5V |
| Pd - Power Dissipation | 50W |
| RDS(on) | 125mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF;77.3pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 900pF;1.6307nF |
60V 50W 125mΩ@4.5V 1 N-Channel + 1 P-Channel TO-252-4L Single FETs, MOSFETs RoHS