NCE NCE6080D

NCE · FETs & Power MOSFETs · MPN NCE6080D

No reviews yet — be the first to review NCE NCE6080D.

Specifications

Gate Charge(Qg)90nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4nF

Technical details

N-Channel 60V 80A 110W Surface Mount TO-263-2L

Related FETs & Power MOSFETs