NCE NCE55P30K

NCE · FETs & Power MOSFETs · MPN NCE55P30K

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Specifications

Gate Charge(Qg)56nC@10V
Drain to Source Voltage55V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation65W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)40mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 55V 30A 65W Surface Mount TO-252-2L

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