NCE NCE55P30F

NCE · FETs & Power MOSFETs · MPN NCE55P30F

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Specifications

Gate Charge(Qg)56nC
Drain to Source Voltage55V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation30W
RDS(on)40mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)153pF
Number1 P-Channel
Input Capacitance(Ciss)3.5nF

Technical details

55V 30A 2.6V 30W 40mΩ@10V 1 P-Channel TO-220F Single FETs, MOSFETs RoHS

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