NCE NCE55P30

NCE · FETs & Power MOSFETs · MPN NCE55P30

No reviews yet — be the first to review NCE NCE55P30.

Specifications

Gate Charge(Qg)56nC@44V
Drain to Source Voltage55V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation6W
Reverse Transfer Capacitance (Crss@Vds)153pF
RDS(on)40mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.5nF

Technical details

55V 30A 2.6V 6W 40mΩ@10V 1 P-Channel TO-220 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs