NCE · FETs & Power MOSFETs · MPN NCE55H12
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| Gate Charge(Qg) | 125nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 460pF |
| RDS(on) | 5.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.9nF |
| Type | N-Channel |
55V 120A 4V 200W 5.5mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS