NCE NCE30P60G

NCE · FETs & Power MOSFETs · MPN NCE30P60G

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Specifications

Gate Charge(Qg)138nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)755pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)564pF
RDS(on)6mΩ@10V
Input Capacitance(Ciss)4.58nF
TypeP-Channel

Technical details

30V 60A 2.1V 70W 6mΩ@10V P-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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