NCE NCE30P50G

NCE · FETs & Power MOSFETs · MPN NCE30P50G

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Specifications

Gate Charge(Qg)8nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)695pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)665pF
RDS(on)7mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.59nF
TypeP-Channel

Technical details

P-Channel 30V 50A 35W Surface Mount PDFN-8(5.8x4.9)

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