NCE NCE30P30G

NCE · FETs & Power MOSFETs · MPN NCE30P30G

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)81.3nC
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation80W
RDS(on)15mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)448.6pF
Number1 P-Channel
Input Capacitance(Ciss)4.222nF
TypeP-Channel

Technical details

P-Channel 30V 30A 80W Surface Mount DFN5X6-8L

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