NCE NCE30P25Q

NCE · FETs & Power MOSFETs · MPN NCE30P25Q

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Specifications

Gate Charge(Qg)45.6nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation40W
RDS(on)20mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)178pF
Input Capacitance(Ciss)1.632nF
TypeP-Channel

Technical details

30V 25A 2.2V 40W 20mΩ@4.5V P-Channel DFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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