NCE NCE30P20Q

NCE · FETs & Power MOSFETs · MPN NCE30P20Q

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Specifications

Gate Charge(Qg)45.6nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)227pF
RDS(on)15mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.13nF

Technical details

P-Channel 30V 20A 35W Surface Mount DFN3.3x3.3-8L

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