NCE NCE30ND35Q

NCE · FETs & Power MOSFETs · MPN NCE30ND35Q

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)17nC@10V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation30W
RDS(on)19mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)164.4pF
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

30V 35A 2V 30W 19mΩ@4.5V N-Channel DFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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