NCE NCE30ND09S

NCE · FETs & Power MOSFETs · MPN NCE30ND09S

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Specifications

Gate Charge(Qg)17.5nC@15V
Drain to Source Voltage30V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)17mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)1.21nF

Technical details

N-Channel Array 30V 9A 2W Surface Mount SOP-8

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