NCE NCE30H10G

NCE · FETs & Power MOSFETs · MPN NCE30H10G

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Specifications

Gate Charge(Qg)115nC@15V
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation65W
RDS(on)1.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)563pF
Number1 N-channel
Input Capacitance(Ciss)6.268nF

Technical details

N-Channel 30V 100A 65W Surface Mount DFN5x6-8L

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