NCE NCE30D2519K

NCE · FETs & Power MOSFETs · MPN NCE30D2519K

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Specifications

Gate Charge(Qg)16.2nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation21W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)18mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)920pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 25A 21W Surface Mount TO-252-4

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