NCE NCE2003

NCE · FETs & Power MOSFETs · MPN NCE2003

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Specifications

Gate Charge(Qg)5nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)100mΩ@2.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)-
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 20V 3A 0.8W Surface Mount SOT-23-6L

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