NCE · FETs & Power MOSFETs · MPN NCE1216
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| Gate Charge(Qg) | 48nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 18W |
| Reverse Transfer Capacitance (Crss@Vds) | 590pF |
| RDS(on) | 18mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.7nF |
12V 16A 400mV 18W 18mΩ@4.5V 1 P-Channel DFNWB-6-EP(2x2) Single FETs, MOSFETs RoHS