NCE NCE01P30K

NCE · FETs & Power MOSFETs · MPN NCE01P30K

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Specifications

Gate Charge(Qg)136nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)93pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)91pF
RDS(on)65mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.81nF
TypeP-Channel

Technical details

P-Channel 100V 30A 120W Surface Mount TO-252-2L

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