NCE NCE01P30D

NCE · FETs & Power MOSFETs · MPN NCE01P30D

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Specifications

Gate Charge(Qg)120nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)184.5pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation120W
RDS(on)58mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)179pF
Input Capacitance(Ciss)8.049nF
TypeP-Channel

Technical details

100V 30A 2.5V 120W 58mΩ@10V P-Channel TO-263-2L Single FETs, MOSFETs RoHS

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