NCE · FETs & Power MOSFETs · MPN NCE01P30D
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| Gate Charge(Qg) | 120nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 184.5pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 120W |
| RDS(on) | 58mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 179pF |
| Input Capacitance(Ciss) | 8.049nF |
| Type | P-Channel |
100V 30A 2.5V 120W 58mΩ@10V P-Channel TO-263-2L Single FETs, MOSFETs RoHS