NCE NCE01P30

NCE · FETs & Power MOSFETs · MPN NCE01P30

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Specifications

Gate Charge(Qg)90nC
Drain to Source Voltage100V
Output Capacitance(Coss)790pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)450pF
RDS(on)58mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.7nF
Vgs±20V

Technical details

P-Channel 100V 30A 120W Through Hole TO-220-3L

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