NCE NCE01P18D

NCE · FETs & Power MOSFETs · MPN NCE01P18D

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Specifications

Gate Charge(Qg)70nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)125pF
RDS(on)100mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.81nF

Technical details

P-Channel 100V 18A 70W Surface Mount TO-263-2L

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