NCE NCE01P18

NCE · FETs & Power MOSFETs · MPN NCE01P18

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Specifications

Gate Charge(Qg)61nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)100mΩ@10V
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

100V 18A 70W 100mΩ@10V P-Channel TO-220-3L Single FETs, MOSFETs RoHS

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