NCE · FETs & Power MOSFETs · MPN NCE01H11
No reviews yet — be the first to review NCE NCE01H11.
| Gate Charge(Qg) | 163nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 220W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.5nF |
100V 110A 3V 220W 9mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS