NCE · FETs & Power MOSFETs · MPN NCE01H10D
No reviews yet — be the first to review NCE NCE01H10D.
| Gate Charge(Qg) | 85nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.8nF |
100V 100A 4V 200W 13mΩ@10V 1 N-channel TO-263-2 Single FETs, MOSFETs RoHS