NCE · FETs & Power MOSFETs · MPN NCE01H10
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| Gate Charge(Qg) | 85nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.8nF |
| Type | N-Channel |
100V 100A 4V 200W 13mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS